FQA9N90C_F109 — N-Channel QFET® MOSFET
FQA9N90C_F109
N-Channel QFET® MOSFET
900 V, 9 A, 1.4 Ω Features
• 9 A, 900 V, RD...
FQA9N90C_F109 — N-Channel QFET®
MOSFET
FQA9N90C_F109
N-Channel QFET®
MOSFET
900 V, 9 A, 1.4 Ω Features
9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A
Low Gate Charge (Typ. 45 nC)
Low Crss . 14 pF)
100% Avalanche Tested
RoHS compliant
April 2014
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
G DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source
Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed...