FQD12N20LTM_F085

FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control. Features 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers Qualified to AEC Q101 RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Avalanche Current (Note 1) (Note 1) dv/dt PD TJ, TSTG TL Peak Diode Recovery dv/dt (Note 2) Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds  ! " !" ! " " !  FQD12N20LTM_F085 200 9.0 5.7 ...