FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.9 A, 4.7 Ω Features
• 1.9 A, 600 V,...
FQD2N60C / FQU2N60C N-Channel QFET®
MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.9 A, 4.7 Ω Features
1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A Low Gate Charge (Typ. 8.5 nC) Low Crss (Typ. 4.3 pF) 100% Avalanche Tested RoHS Compliant
N-Channel QFET®
MOSFET
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D G S G D
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D-PAK
I-PAK
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source
Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Parameter
FQD2N60C / FQU2N60C
600 1.9 1.14 7.6 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Unit
V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C
120 1.9 4.4 4.5 2.5 44 0.35 -55 to +150 300
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seco...