FQH35N40 400V N-Channel MOSFET
FQH35N40
400V N-Channel MOSFET
Features
• 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V • Low ...
FQH35N40 400V N-Channel
MOSFET
FQH35N40
400V N-Channel
MOSFET
Features
35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V Low gate charge ( typical 110 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability
July 2005
QFET®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
GD S
TO-247
FQH Series
Absolute Maximum Ratings
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source
Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Ga...