MOSFET. FQH44N10_F133 Datasheet

FQH44N10_F133 Datasheet PDF

Part FQH44N10_F133
Description MOSFET
Feature FQH44N10_F133 FQH44N10_F133 100V N-Channel MOSFET Octorber 2008 QFET ® General Description These .
Manufacture Fairchild Semiconductor
Datasheet
Download FQH44N10_F133 Datasheet

FQH44N10_F133 FQH44N10_F133 100V N-Channel MOSFET Octorber FQH44N10_F133 Datasheet





FQH44N10_F133
FQH44N10_F133
100V N-Channel MOSFET
Octorber 2008
QFET ®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
G
GD S
TO-247
FQH Series
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
FQH44N10_F133
100
48
34
192
± 25
530
48
18
6.0
180
1.2
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ Max
-- 0.83
0.24 --
-- 40
©2008 Fairchild Semiconductor Corporation
1
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. A, October 2008



FQH44N10_F133
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 24 A
VDS = 40 V, ID = 24 A
(Note 4)
2.0
--
--
--
0.03
31
4.0
0.039
--
V
Ω
S
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1400 1800
-- 425 550
-- 85 110
pF
pF
pF
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 50 V, ID = 43.5 A,
RG = 25 Ω
-- 19
45
-- 190 390
-- 90 190
(Note 4, 5)
--
100
210
VDS = 80 V, ID = 43.5 A,
VGS = 10 V
(Note 4, 5)
--
--
--
48
9.0
24
62
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 48
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 48 A
-- -- 192
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 43.5 A,
dIF / dt = 100 A/μs
(Note 4)
--
--
98
360
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.345mH, IAS = 48A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 43.5A, di/dt 300A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300μs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2008 Fairchild Semiconductor Corporation
2
Rev. A, October 2008




@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)