FQH70N10
FQH70N10
100V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect...
FQH70N10
FQH70N10
100V N-Channel
MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
GD S
TO-247
FQH Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source ...