MOSFET. FQH70N10 Datasheet

FQH70N10 Datasheet PDF

Part FQH70N10
Description MOSFET
Feature FQH70N10 FQH70N10 100V N-Channel MOSFET QFET® General Description These N-Channel enhancement mod.
Manufacture Fairchild Semiconductor
Datasheet
Download FQH70N10 Datasheet

FQH70N10 FQH70N10 100V N-Channel MOSFET QFET® General Des FQH70N10 Datasheet





FQH70N10
FQH70N10
100V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• 70A, 100V, RDS(on) = 0.023@VGS = 10 V
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 150 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-247
FQH Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQH70N10
100
70
49.5
280
± 25
1300
70
21.4
6.0
214
1.43
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.7
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003



FQH70N10
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 35 A
-- 0.019 0.023
VDS = 40 V, ID = 35 A
(Note 4) --
48
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2500 3300
-- 720 940
-- 150 200
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 50 V, ID = 70 A,
RG = 25
-- 30
70
-- 470 950
-- 130 270
(Note 4, 5)
--
160
330
VDS = 80 V, ID = 70 A,
-- 85 110
VGS = 10 V
-- 16
--
(Note 4, 5) --
42
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 70
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 280
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 70 A
-- -- 1.5
trr Reverse Recovery Time
VGS = 0 V, IS = 70 A,
-- 110
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
430
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.4mH, IAS = 70A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 70A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003




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