FQP15N60/FQPF15N60
600V 15A Super Junction MSFET
General Description
Product Summary
The FQP15N60& FQPF15N60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% U.
Super Junction MSFET
FQP15N60/FQPF15N60
600V 15A Super Junction MSFET
General Description
Product Summary
The FQP15N60& FQPF15N60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 63A 0.29Ω 16nC 3.6µJ
TO-220
TO-220F
Top View
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol FQP15N60/FQB15N60
Drain-Source Voltage
VDS
600
Gate-Source Voltage VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM IAR EAR EAS
15 10
63 2.4 86 173
TC=25°C Power Dissipation B Derate above 25oC
PD
.