FQP3N50C

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET QFET® FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V Low gate charge ( typical 10 nC ) Low Crss ( typical 8.5 pF) Fast switching 100 % avalanche tested Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D { GD S TO-220 FQP Series GD S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJS RθJA Parameter...