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FQP45N15V2 Datasheet

Part Number FQP45N15V2
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 150V N-Channel MOSFET
Datasheet FQP45N15V2 DatasheetFQP45N15V2 Datasheet (PDF)

FQP45N15V2/FQPF45N15V2 QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous re.

  FQP45N15V2   FQP45N15V2






150V N-Channel MOSFET

FQP45N15V2/FQPF45N15V2 QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. ® Features • • • • • • 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP GD S TO-220F FQPF ! S Absolute Maximum Ratings Symbol VDSS ID www.DataSheet4U.com IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP45N15V2 45 31 180 FQPF45N15V2 150 45 * 31 * 180 * ± 30 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) 1124 45 22 4.5 220 1.47 -55 to +150 300 66 0.44 - Derate above 25°C Operating and Storage Temperature Range Maximum lead tem.


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