FQP4N60 Datasheet PDF
N-Channel MOSFET
- FQP4N60 | Oucan Semi
- 4A N-Channel MOSFET
-
FQP4N60/FQPF4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The FQP4N60 & FQPF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID .
- FQP4N60 | Fairchild Semiconductor
- 600V N-Channel MOSFET
-
FQP4N60
April 2000
QFET
FQP4N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for hi.
- FQP4N60 | Oucan Semi
- 4A N-Channel MOSFET
- FQP4N60/FQPF4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The FQP4N60 & FQPF4.
- FQP4N60/FQPF4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The FQP4N60 & FQPF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID .
- FQP4N60 | Fairchild Semiconductor
- 600V N-Channel MOSFET
- FQP4N60
April 2000
QFET
FQP4N60
600V N-Channel MOSFET
General Description
These N-Channel enhancem.
- FQP4N60
April 2000
QFET
FQP4N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for hi.
- FQP4N60C | HAOHAI
- N-Channel MOSFET
- 4A, 600V, N
FQP4N60C FQPF4N60C
H4N60P H4N60F
4N60
H HAOHAI
P: TO-220AB F: TO-220FP
.
- 4A, 600V, N
FQP4N60C FQPF4N60C
H4N60P H4N60F
4N60
H HAOHAI
P: TO-220AB F: TO-220FP
50Pcs
4N60 Series
N-Channel MOSFET
1000Pcs
5000Pcs
■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 15nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 100% Avalanche .