FQPF17P10
QFET
FQPF17P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect ...
FQPF17P10
QFET
FQPF17P10
100V P-Channel
MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM
Features
-10.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
G GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF17P10 -100 -10.5 -7.4 -42 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
580 -10.5 4.1 -6.0 41 0.27 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8...