FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET
FQP2N60C / FQPF2N60C
N-Channel QFET® MOSFET
600 V, 2 A, 4.7 Ω
December 2...
FQP2N60C / FQPF2N60C — N-Channel QFET®
MOSFET
FQP2N60C / FQPF2N60C
N-Channel QFET®
MOSFET
600 V, 2 A, 4.7 Ω
December 2013
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A
Low Gate Charge (Typ. 8.5 nC)
Low Crss (Typ. 4.3 pF)
100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source
Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-...