FQPF4N65

FQP4N65/FQPF4N65 650V,4A N-Channel MOSFET General Description Product Summary The FQP4N65 & FQPF4N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 650V@150℃ 4A < 3.0Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP4N60 FQPF4N60 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 4 4* 2.7 2.7* 16 2.5 94 188 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 104 0.83 35 0.28 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP4N60 65 0.5 FQPF4N60 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1.2 3.6 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/...