FQP4N65/FQPF4N65
650V,4A N-Channel MOSFET
General Description
Product Summary
The FQP4N65 & FQPF4N65 have been fabric...
FQP4N65/FQPF4N65
650V,4A N-Channel
MOSFET
General Description
Product Summary
The FQP4N65 & FQPF4N65 have been fabricated using an advanced high
voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
650V@150℃ 4A < 3.0Ω
TO-220
Top View
TO-220F
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP4N60
FQPF4N60
Drain-Source
Voltage
VDS 650
Gate-Source
Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS
dv/dt
4 4* 2.7 2.7*
16 2.5 94 188 50
5
TC=25°C Power Dissipation B Derate above 25oC
PD
104 0.83
35 0.28
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP4N60 65 0.5
FQPF4N60 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
3.6
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/...