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FQPF50N06L Datasheet

Part Number FQPF50N06L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V LOGIC N-Channel MOSFET
Datasheet FQPF50N06L DatasheetFQPF50N06L Datasheet (PDF)

FQPF50N06L May 2001 QFET FQPF50N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive.

  FQPF50N06L   FQPF50N06L






Part Number FQPF50N06
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet FQPF50N06L DatasheetFQPF50N06 Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor FQPF50N06 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Cont.

  FQPF50N06L   FQPF50N06L







Part Number FQPF50N06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V N-Channel MOSFET
Datasheet FQPF50N06L DatasheetFQPF50N06 Datasheet (PDF)

FQPF50N06 May 2001 QFET FQPF50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC.

  FQPF50N06L   FQPF50N06L







60V LOGIC N-Channel MOSFET

FQPF50N06L May 2001 QFET FQPF50N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • 32.6A, 60V, RDS(on) = 0.021Ω @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF50N06L 60 32.6 23.1 130 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 1000 32.6 4.7 7.0 47 0.31 -55 to +175 300 - Derate above 25°C Operating and Storage.


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