DatasheetsPDF.com

FQU3N60CTU Datasheet

Part Number FQU3N60CTU
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FQU3N60CTU DatasheetFQU3N60CTU Datasheet (PDF)

FQU3N60CTU N-Channel QFET) MOSFET 600 V, 2.4 A, 3.4 W This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2.4.

  FQU3N60CTU   FQU3N60CTU






N-Channel MOSFET

FQU3N60CTU N-Channel QFET) MOSFET 600 V, 2.4 A, 3.4 W This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2.4 A, 600 V, RDS(on) = 3.4 W (Max.) @ VGS = 10 V, ID = 1.2 A • Low Gate Charge (Typ. 10.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • LCD / LED TV • Lighting • Charger / Adapter www.onsemi.com D G S IPAK3 CASE 369AR ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 1 May, 2019 − Rev. 0 Publication Order Number: FQU3N60CTU/D FQU3N60CTU MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain−to−Source Voltage Gate−to−Source Voltage Drain Current IDM EAS IAR EAR dv/dt Drain Current Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery (Note 3) 600 V ±30 V Continuous (TC = 25°C) 2.4 A Continuous (TC = 100°C) 1.5 Pulsed (Note 1) 9.6 A 150 mJ 2.4 A 4.0 mJ 4.5 V/ns PD Powe.


2023-01-23 : FDMD8900    FQP3N50C    FQPF3N50C    IRFW630B    MMBFJ110    MMBF5103    NCS2584    NCP45495    J175    J176   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)