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FS3L200R10W3S7F_B11

Infineon

IGBT

FS3L200R10W3S7F_B11 EasyPACK™ModulmitTRENCHSTOP™IGBT7undCoolSiC™SchottkyDiodeundPressFIT/NTC EasyPACK™modul...


Infineon

FS3L200R10W3S7F_B11

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Description
FS3L200R10W3S7F_B11 EasyPACK™ModulmitTRENCHSTOP™IGBT7undCoolSiC™SchottkyDiodeundPressFIT/NTC EasyPACK™modulewithTRENCHSTOP™IGBT7andCoolSiC™SchottkydiodeandPressFIT/NTC PotentielleAnwendungen 3-Level-Applikationen SolarAnwendungen USV-Systeme ElektrischeEigenschaften CoolSiCTMSchottkyDiodeGen5 NiedrigeSchaltverluste TrenchstopTMIGBT7 MechanischeEigenschaften Al2O3 Substrat mit kleinem thermischen Widerstand IntegrierterNTCTemperaturSensor KompaktesDesign PressFITVerbindungstechnik VCES = 950V IC nom = 100A / ICRM = 200A PotentialApplications 3-level-applications Solarapplications UPSsystems ElectricalFeatures CoolSiCTMSchottkydiodegen5 Lowswitchinglosses TrenchstopTMIGBT7 MechanicalFeatures Al2O3substratewithlowthermalresistance IntegratedNTCtemperaturesensor Compactdesign PressFITcontacttechnology ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet www.infineon.com PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.0 2020-05-08 FS3L200R10W3S7F_B11 IGBT,Hochsetzsteller/IGBT,Boost HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C ImplementierterKollektor-Strom Implementedcollector...




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