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FTD2003 FET Datasheet PDFN-Channel Silicon MOS FET N-Channel Silicon MOS FET |
| Part Number | FTD2003 |
|---|---|
| Description | N-Channel Silicon MOS FET |
| Feature | www.DataSheet4U.com
FTD2003
N- Channel Silicon MOS FET Very High Speed-Switchng
TENTATIVE
Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static. |
| Manufacture | Sanyo Semiconductor Corporation |
| Datasheet |
| Part Number | FTD2003 |
|---|---|
| Description | N-Channel Silicon MOS FET |
| Feature | www.DataSheet4U.com
FTD2003
N- Channel Silicon MOS FET Very High Speed-Switchng
TENTATIVE
Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static. |
| Manufacture | Sanyo Semiconductor Corporation |
| Datasheet |
| Part Number | FTD2003 |
|---|---|
| Description | N-Channel Silicon MOS FET |
| Feature | www. DataSheet4U. com FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resistance. • 2. 5V drive. • Mount height of 1. 1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static. |
| Manufacture | Sanyo Semiconductor Corporation |
| Datasheet |
| Part Number | FTD2003 |
|---|---|
| Description | N-Channel Silicon MOS FET |
| Feature | www. DataSheet4U. com FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resistance. • 2. 5V drive. • Mount height of 1. 1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static. |
| Manufacture | Sanyo Semiconductor Corporation |
| Datasheet |
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