FTE10N06NA

FTE10N06NA N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 60V Lead Free Package and Finish RDS(ON)(Typ.) 8mΩ ID 55A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE FTE10N06NA SOP-8 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter FTE10N06NA VDSS Drain-to-Source Voltage 60 ID Continuous Drain Current Continuous Drain Current TC =100℃ 55 8 IDM Pulsed Drain Current, VGS@10V 32 Power Dissipation PD Derating Factor above 25℃ 2.5 0.02 VGS Gate-to-Source Voltage ±20 EAS Single Pulse Avalanche Energy 320 TL Maximum Temperature for Soldering 300 Operating Junction and Storage TJ and TSTG Temperature Range -55 to150 Units V A A A W W/℃ V mJ ℃ Thermal Resistance Symbol Parameter RθJA Junction-to-Ambient Typ. Max. Units Test Conditions 50 ℃/ W 1 cubic foot ...