MOSFET. FTP02N04NA Datasheet

FTP02N04NA Datasheet PDF


FTP02N04NA
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP02N04NA TO-220
BRAND
IPS
VDSS
40V
FTP02N04NA
Lead Free Package and Finish
RDS(ON)(Typ.)
1.8mΩ
ID(silicon
limited)
300A
IDPackage
limited
120A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP02N04NA
VDSS
Drain-to-Source Voltage
40
Continuous Drain Current
ID Continuous Drain Current TC = 100 °C
300
197
IDM Pulsed Drain Current (NOTE *1)
VGS Gate-to-Source Voltage
1200
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
800
PD Power Dissipation
312.5
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
V
mJ
W
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
0.4
62.5
Units
W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2018 InPower Semiconductor Co., Ltd.
Page 1 of 6
FTP02N04NA Preliminary.Mar. 2018


Part FTP02N04NA
Description N-Channel MOSFET
Feature FTP02N04NA; N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTP02N04NA Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP02N04NA Datasheet





FTP02N04NA
FTP02N04NA
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 40 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=40V, VGS=0V
TC=25
VDS=32V, VGS=0V
TC=125
VGS=+20V
VGS= -20V
ON Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 1.8
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
1 --
Max.
2.3
3
Units
mΩ
V
Test Conditions
VGS=10V, ID=100A
VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate resistance
-- 1.7 -- Ω VGS=0V, VDS=0V,
f=1MHz
Ciss Input Capacitance
Coss Output Capacitance
-- 14360
-- 1177
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Crss
Reverse Transfer Capacitance
-- 950
--
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 250 --
-- 57 -- nC ID=100A,VDD=20V
-- 60 --
VGS = 10V
©2018 InPower Semiconductor Co., Ltd.
Page 2 of 6
FTP02N04NA Preliminary.Mar. 2018



FTP02N04NA
FTP02N04NA
Source-Drain Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS (Body Diode)
Maximum Pulsed Current
ISM (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width 300μs; duty cycle 2%
Tc=25unless otherwise specified
Min. Typ. Max. Units Test Conditions
-- -- 300 A
-- -- 1200 A
-- -- 1.5 V ISD=100A,VGS=0V
-- 40 --
ns
IF= 50A
-- 45 --
uC
di/dt=100A/us
Notes:
*1. Repetitive rating; pulse width limited by maximum junction temperature.
*2. L=10mH, ID=126.5A, Start TJ=25
©2018 InPower Semiconductor Co., Ltd.
Page 3 of 6
FTP02N04NA Preliminary.Mar. 2018




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