FW103

Ordering number : EN5305A P-Channel Silicon MOSFET FW103 Ultrahigh-Speed Switching Applications Features Low ON resistance Ultrahigh-speed switching. Composite type with two 4V-drive P-channel MOSFETs facilitating high-density mounting. Matched pair capability. Package Dimensions unit: mm 2129-SOP8 [FW103] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation VDSS VGSS ID IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Total Dissipation PT Mounted on a ceramic board (1000mm2×0.8mm) Channel Temperature Tch Storage temperature Tstg Electrical Characteristics at Ta=25°C Parameter Symbol Conditions D-S Breakdown Voltage V(BR)DSS Zero-Gate-Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance yfs Static Drain-to-Source RDS(on) ON-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–3A ID=–3A, VGS=–10V ID=–3A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Ratings –30 ±20 –3 –32 1.7 Unit V V A A W 2.0 W 150 –55 to +150 °C °C Ratings Unit min typ max –30 V ...