FW113

Ordering number :EN5847 P-Channel Silicon MOS FET FW113 S/W Load Applications Features · 4V drive. · Low ON resistance. Package Dimensions unit:mm 2129 [FW113] 85 0.1 1.5 1.8max 4.4 0.3 6.0 Specifications Absolute Maximum Ratings at Ta = 25˚C 1 5.0 4 0.595 1.27 0.43 1:Source1 2:Gate1 3:Source2 4:Gate2 0.2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2×0.8mm) 1unit Mounted on ceramic board (1000mm2×0.8mm) Ratings –30 ±20 –5 –32 1.7 2.0 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Diode Forward Voltage Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–5A ID=–5A, VGS=–10V ID=–2A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz...