FX20KMJ-3
High-Speed Switching Use Pch Power MOS FET
Features
• Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0...
FX20KMJ-3
High-Speed Switching Use Pch Power MOS FET
Features
Drive
voltage : 4 V VDSS : –150 V rDS(ON) (max) : 0.29 Ω ID : –20 A Integrated Fast Recovery Diode (TYP.) : 100 ns Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
3
12 3
1 2
REJ03G1444-0200 (Previous: MEJ02G0289-0101)
Rev.2.00 Aug 07, 2006
1. Gate 2. Drain 3. Source
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter Drain-source
voltage Gate-source
voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation
voltage
Mass
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso
—
Ratings –150 ±20 –20 –80 –20 –20 –80 30
– 55 to +150 – 55 to +150
2000
2.0
Unit V V A A A A A W °C °C V
g
(Tc = 25°C)
Conditions VGS = 0 V VDS = 0 V
L = 30 µH
AC for 1 min...
