European PowerSemiconductor and Electronics Company
www.DataSheet4U.com
Marketing Information FZ 800 R 16 KF4
18 screw...
European PowerSemiconductor and Electronics Company
www.DataSheet4U.com
Marketing Information FZ 800 R 16 KF4
18 screwing depth max. 8 61,5 M8
31,5
130 114
C
C
E E C G
E
M4 28
7
16,5
2,5 18,5
external connection (to be done)
C C
C
G E E E
external connection (to be done)
VWK Apr. 1997
IGBT-Module
Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung collector-emitter
voltage DC-collector current repetitive peak collector current total power dissipation gate-emitter peak
voltage DC forward current repetitive peak forw. current insulation test
voltage tp=1ms RMS, f=50 Hz, t= 1 min. tp=1 ms tC=25°C, Transistor /transistor VCES IC ICRM Ptot VGE IF IFRM VISOL
FZ 800 R 16 KF4
1600 V 800 A 1600 A 6250 W ± 20 V 800 A 1600 A 3,4 kV min. typ. 3,3 4,4 5,5 130 6 60 0,8 1 1,1 1,3 0,25 0,3 max. 3,7 V 4,8 V 6,5 V - nF - mA - mA 400 nA 400 nA - µs - µs - µs - µs - µs - µs
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom collector-emitter saturation
voltage gate threshold
voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) iC=800A,...
