FZT953

SMD Type Transistors PNP Transistors FZT953 (KZT953) ■ Features ● Collector Current Capability IC=-5A ● Collector Emitter Voltage VCEO=-100V ● Complementary to FZT853 SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating -140 -100 -6 -5 -10 3 150 -55 to 150 Unit V A W ℃ www.kexin.com.cn 1 SMD Type Transistors PNP Transistors FZT953 (KZT953) ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Collector-emitter cut-off current (R≤1KΩ) Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base-Emitter Turn-On Voltage DC current gain (Note.1) Switching Times Collector output capacitance Transition frequency Note.1: Pulse width=300 us. Duty cycle ≤ 2% Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCER Ic= -1uA，RB≤1KΩ VCEO Ic= -10 mA， IB=0 VEBO IE= -100μA， IC=0 ICBO VCB= -100 V , IE=0 VCB= -100 V , IE=0 ,Ta = 100℃ ICER VCB= -100 V , IE=0 VCB= -100 V , IE=0 ,Ta = 100...