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IGA03N120H2
HighSpeed 2-Technology
C
• •
Designed for: - TV – Horizontal Line Deflection 2nd gen...
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IGA03N120H2
HighSpeed 2-Technology
C
Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Gate-Control
G E
P-TO220-3-31 (FullPAK)
P-TO220-3-34 (FullPAK)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGA03N120H2 IGA03N120H2 VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj,max 150°C 150°C Marking G03H1202 G03H1202 Package P-TO-220-3-31 P-TO-220-3-34 Ordering Code Q67040-S4648 Q67040-S4654
Maximum Ratings Parameter Collector-emitter
voltage TC = 100°C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter
voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 °C VGE Ptot ±20 29 V W ICpuls Triangular collector peak current (VGS = 15V) Symbol Value 1200 8.2 9 9 Unit V A
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Power Semiconductors
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1
Mar-04, Rev. 2.0
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IGA03N120H2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient RthJA P-TO-220-3-31 P-TO-220-3-34 64 RthJC 4.3 K/W Symbol Conditions Max. Value...