G1007 Datasheet

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G1007 Datasheet - MOSFET

G1007   G1007  

Datasheet: G1007 datasheet

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Description: GOFORD General Description The G1007. c ombines advanced trench MOSFET technolo gy with a low resistance package to pro vide extremely low RDS(ON). This device is ideal for power switching applicati on and LED backlighting. Features VDSS 100V RDS(ON) @10V (typ) 70mΩ ID 7A ● Ultra Low On-Resistance ● High U IS and UIS 100% Test Application ● Po wer switching application ● LED backl ighting G1007. Schematic Diagram Marki ng and pin Assignment Table 1. Absolut e Maximum Ratings (TA=25℃) Symbol P arameter VDS Drain-Source Voltage (VGS =0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) PD EAS Dr ain Current (DC) at Tc=25℃ Drain Curr ent (DC) at Tc=100℃ Drain Current-Continuous@ Cur

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