www.DataSheet4U.com
ISSUED DATE :2005/08/01 REVISED DATE :
G1270
Description Features
P NP EP ITAXI AL PL ANAR T RANSI STOR
The G1270 is designed for general purpose switching and amplifier applications. Excellent hFE(2)=25(Min.) @ VCE=-6V, IC=-400mA
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66.
NPN EPITAXIAL PLANAR TRANSISTOR
www.DataSheet4U.com
ISSUED DATE :2005/08/01 REVISED DATE :
G1270
Description Features
P NP EP ITAXI AL PL ANAR T RANSI STOR
The G1270 is designed for general purpose switching and amplifier applications. Excellent hFE(2)=25(Min.) @ VCE=-6V, IC=-400mA
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg Ratings -35 -30 -5 -500 625 150 -55 ~ +150 Unit V V V mA mW
Electrical Characteristics (TA = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -35 -30 -5 70 25 100 Typ. -
unless otherwise noted)
Max. -100 -100 -0.25 -1.0 240 8 MHz pF Unit V V V nA nA V V IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA VCE=-1V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Test Conditions
Classification Of hFE
Rank hFE1 Range hFE2 Range O 70 - 140 Min. 25 Y 120 - 240 Min. 40
1/2
ISSUED DATE :2005/08/01 REVISED DATE :
Characteristics Curve
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