G20N100D2

HGTG20N100D2 May 1995 20A, 1000V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features 34A, 1000V Latch Free Operation Typical Fall Time 520ns High Input Impedance Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG20N100D2 PACKAGE TO-247 BRAND G20N100D2 COLLECTOR (BOTTOM SIDE METAL) Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG20N100D2 1000 1000 34 20 100 ±20 ±30 100A at 0.8 BVCES 150 1.20 -55 to +150 260 3 15 UNITS V V A A A V V W W/oC oC oC µs µs Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . ...