Semiconductor
HGTG20N120E2
April 1995
34A, 1200V N-Channel IGBT
Features
• 34A, 1200V • Latch Free Operation • Typi...
Semiconductor
HGTG20N120E2
April 1995
34A, 1200V N-Channel IGBT
Features
34A, 1200V Latch Free Operation Typical Fall Time - 780ns High Input Impedance Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high
voltage switch-
ing device combining the best features of
MOSFETs and
bipolar transistors. The device has the high input impedance
of a
MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state
voltage drop varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high
voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
HGTG20N120E2 TO-247
BRAND G20N120E2
Package
JEDEC STYLE TO-247
COLLECTOR (BOTTOM SIDE
METAL)
EMITTER COLLECTOR GATE
Termi...