www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
G2300
N-CHANNEL ENHANCEM...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
G2300
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
20V 28m 6A
The G2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2300 is universally used for all commercial-industrial surface mount applications.
Description
*Low on-resistance *Capable of 2.5V gate drive *Small Package Outline
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 20 ±8 6 4.8 20 1.25 0.01 -55 ~ +150 Value 100
Unit V V A A A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
1/4
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown
Voltage
Breakdown
Voltage Temperature Coefficient
unless otherwise specified)
Min. 20 0.5 Typ. 0.1 10 3.6 2 8 6 19 7 550 120 80 Max. 1.0 ±100 1 25 28 38 pF ns nC Unit V V/ V nA uA uA m Test Conditions VGS=0, ID=250uA Reference ...