www.DataSheet4U.com
Pb Free Plating Product
CORPORATION
G2301
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :20...
www.DataSheet4U.com
Pb Free Plating Product
CORPORATION
G2301
P-CHANNEL ENHANCEMENT MODE POWER
MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B
The G2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2301 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Description
BVDSS RDS(ON) ID
-20V 130m -2.6A
Features
Applications
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System.
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source
Voltage Gate-Source
Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
-20 12 -2.6 -2.1 -10 1.38 0.01 -55 ~ +150 Ratings 90
V V A A A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
1/4
CORPORATION
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown
Voltage
Breakdown
Voltage Temperature Coefficient
ISSUED DATE :2004/10/...