G2303

www.DataSheet4U.com Pb Free Plating Product CORPORATION G2303 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID -30V 240m -1.9A The G2303 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Description Features Applications Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 20 -1.9 -1.5 -10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B Unless otherwise specified) Min. -30 -1.0 Typ. -0.1 2 6.2 1.4 0.3 7.6 8.2 17.5 9 230 130.4 40 Max. 100 -1 -10 240 460 pF ns n...