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Pb Free Plating Product
ISSUED DATE :2005/01/17 REVISED DATE :2006/07/17C
G2306A
N-CHANNEL ENHANCE...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/01/17 REVISED DATE :2006/07/17C
G2306A
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
30V 35m 5A
Description
The G2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2306A is universally used for all commercial-industrial applications.
*Capable of 2.5V gate drive *Lower on-resistance
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current3,
[email protected] 3 Continuous Drain Current ,
[email protected] 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Symbol Rthj-a
Ratings 30 ±12 5 4 20 1.38 0.01 -55 ~ +150 Ratings 90
Unit V V A A A W W/
Thermal Data
Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W
1/4
ISSUED DATE :2005/01/17 REVISED DATE :2006/07/17C
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown
Voltage
Breakdown
Voltage Temperature Coefficient
Unless otherwise specified)
Min. 30 0.5 Typ. 0.1 13 8.5 1.5 3.2 6 20 20 3 660 90 70 Max. 1.2 ±100 1 25 30 35 50 90 15 1050 pF ns nC m Unit V V/ V S nA uA u...