G2SD655

www.DataSheet4U.com CORPORATION G2SD655 Silico n NPN Epi ta xi al Application Low frequency power amplifier, Muting. Package Dimensions D E S1 ISSUED DATE :2004/05/24 REVISED DATE :2004/11/29B TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect peak current Junction Temperature Storage Temperature Range Total Power Dissipation ) Ratings VCBO VCEO VEBO IC IC(peak) Tj Tstg PD 30 15 5 0.7 1.0 +150 -55 ~ +150 500 mW Unit V V V A A Electrical Characteristics(Ta = 25 Symbol Min. Typ. ) Max. Unit Test Conditions BVCBO BVCEO BVEBO ICBO VBE VCE(sat) hFE1 * fT 1 30 15 5 250 - 0.15 250 1.0 1.0 0.5 1200 - V V V uA V V MHz IC=10uA ,IE=0 IC=1mA,RBE= IE=10uA,IC=0 VCB=20V, IE=0 VCE=1V,IC=150mA IC=500mA, IB=50mA * VCE=1V, IC=150mA * VCE=1V, IC=150mA 2 2 Notes: 1. The G2SD655 is grouped by hFE as follows. 2. Pulse test Classification of Rank Rank Range D 250-500 E 400-800 F 600-1200 G2SD655 Page: 1/3 CORPORATION Characteristics Curve ISSUED DATE :2004/05/24 REVISED DATE :2004/11/29B G2SD655 Page: 2/3 CORPORATION ISSUED DATE :2004/05/24 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without t...