Diode. G3M Datasheet

G3M Datasheet PDF


G3M
VISHAY
Standard Sinterglass Diode
G3A / B / D / G / J / K / M
Vishay Semiconductors
Features
• High temperature metallurgically bonded con-
structed rectifiers
• Cavity-free glass passivated junction
• Hermetically sealed package
• 3.0 ampere operation at Tamb= 70 °C with no ther-
mal runaway
Mechanical Data
Case: Sintered glass case, G-3
17132
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 1100 mg
Parts Table
G3A
Part
G3B
G3D
G3G
G3J
G3K
G3M
Type differentiation
Package
VRRM = 50 V
G-3
VRRM = 100 V
G-3
VRRM = 200 V
G-3
VRRM = 400 V
G-3
VRRM = 600 V
G-3
VRRM = 800 V
G-3
VRRM = 1000 V
G-3
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
Maximum average forward
rectified current
0.375 " (9.5 mm) lead length at
Tamb = 70 °C
Part
G3A
G3B
G3D
G3G
G3J
G3K
G3M
Symbol
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IF(AV)
Value
50
100
200
400
600
800
1000
3.0
Unit
V
V
V
V
V
V
V
A
Document Number 86086
Rev. 1.3, 11-Aug-04
www.vishay.com
1


Part G3M
Description Standard Sinterglass Diode
Feature G3M; VISHAY Standard Sinterglass Diode G3A / B / D / G / J / K / M Vishay Semiconductors Features • Hig.
Manufacture Vishay
Datasheet
Download G3M Datasheet


VISHAY Standard Sinterglass Diode G3A / B / D / G / J / K / G3M Datasheet
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G3M
G3A / B / D / G / J / K / M
Vishay Semiconductors
VISHAY
Parameter
Peak forward surge current
Maximum full load reverse
current
Operating junction and storage
temperature range
Test condition
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
full cycle average 0.375 "
(9.5 mm) lead length at
Tamb = 70 °C
Part
Symbol
Value
Unit
IFSM
125
A
IR(AV)
200
µA
TJ, TSTG - 55 to + 175
°C
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Typical thermal resistance 1)
RθJA
20 K/W
RθJL
10 K/W
1) Thermal resistance from junction to ambient and from junction to lead at 0.375 " (9.5 mm) lead length, with both leads mounted between
heatsinks
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum instantaneous
forward voltage
IF = 3 A
Maximum reverse current
Typical reverse recovery time
Typical junction capacitance
VR = VRRM, Tamb = 25 °C
VR = VRRM, Tamb = 150 °C
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
VR = 4.0 V, f = 1 MHz
Symbol
VF
VF
VF
VF
VF
VF
VF
IR
IR
trr
Cj
Min Typ. Max Unit
1.2 V
1.2 V
1.1 V
1.1 V
1.1 V
1.1 V
1.1 V
5.0 µA
100 µA
3.0 µs
40 pF
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
4.0
60HZ Resistive or
Inductive Load
3.0
2.0
1.0
0.375" (9.5mm)
Lead Length
0
0 25 50 75
100 125
150 175
gg3a_01
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
www.vishay.com
2
Document Number 86086
Rev. 1.3, 11-Aug-04



G3M
VISHAY
200
100
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
G3A / B / D / G / J / K / M
Vishay Semiconductors
100
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
10
1
gg3a_02
10
Number of Cycles at 60HZ
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
10
1
gg3a_05
10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
30
10
TJ = 150°C
TJ = 25°C
1
0.1 Pulse Width = 300µs
1% Duty Cycle
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
gg3a_03
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
TJ = 100°C
1
TJ = 75°C
0.1
0.01
0
gg3a_04
TJ = 25°C
20 40 60 80
Percent of Rated Peak Reverse Voltage (%)
100
Figure 4. Typical Reverse Characteristics
Document Number 86086
Rev. 1.3, 11-Aug-04
www.vishay.com
3






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