GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =40A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully cha...
