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G40N150D Datasheet

Part Number G40N150D
Manufacturers Fairchild
Logo Fairchild
Description FGL40N150D
Datasheet G40N150D DatasheetG40N150D Datasheet (PDF)

FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C G TO-264 G C E TC = 25°C unless otherwise noted E Absolute Max.

  G40N150D   G40N150D






FGL40N150D

FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C G TO-264 G C E TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGL40N150D 1500 ± 25 40 20 120 10 100 200 80 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics www.DataSheet4U.com Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.625 0.83 25 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation FGL40N150D Rev. A1 FGL.


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