G4BH20K-L

PD -93961 IRG4BH20K-L INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Industry standard TO-262 package Benefits As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBT's offer highest power density motor controls possible C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 1200V VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.0A TO-262 Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance RθJC RθCS RθJA Wt www.irf.com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Max. 1200 11 5.0 22 22 10 ±20 130 60 24 -55 to +150 Units V A µs V mJ W °C Typ. ––– 0.24 ––– 6 (0.21) Max. 2.1 ––– 40 ...