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G4PC30S Datasheet

Part Number G4PC30S
Manufacturers International Rectifier
Logo International Rectifier
Description IRG4PC30S
Datasheet G4PC30S DatasheetG4PC30S Datasheet (PDF)

PD - 91586A INSULATED GATE BIPOLAR TRANSISTOR IRG4PC30S Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified applic.

  G4PC30S   G4PC30S






Part Number G4PC30U
Manufacturers International Rectifier
Logo International Rectifier
Description IRG4PC30U
Datasheet G4PC30S DatasheetG4PC30U Datasheet (PDF)

PD 91461E IRG4PC30U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for.

  G4PC30S   G4PC30S







Part Number G4PC30KD
Manufacturers International Rectifier
Logo International Rectifier
Description IRG4PC30KD
Datasheet G4PC30S DatasheetG4PC30KD Datasheet (PDF)

PD -91587A IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, www.DataSheet4U.com VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 6.

  G4PC30S   G4PC30S







Part Number G4PC30F
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet G4PC30S DatasheetG4PC30F Datasheet (PDF)

PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C Fast Speed IGBT • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT'.

  G4PC30S   G4PC30S







IRG4PC30S

PD - 91586A INSULATED GATE BIPOLAR TRANSISTOR IRG4PC30S Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance RθJC RθCS RθJA Wt Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight www.irf.com TO-247AC Max. 600 34 18 68 68 ± 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Typ. ––– 0.24 ––– 6 (0.21) Max. 1.2 ––– 40 ––– Units °C/W g (oz) .


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