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G4PC40S Datasheet

Part Number G4PC40S
Manufacturers IRF
Logo IRF
Description IRG4PC40S
Datasheet G4PC40S DatasheetG4PC40S Datasheet (PDF)

PD 91465B IRG4PC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, I C = 31A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified appli.

  G4PC40S   G4PC40S






Part Number G4PC40W
Manufacturers IRF
Logo IRF
Description IRG4PC40W
Datasheet G4PC40S DatasheetG4PC40W Datasheet (PDF)

PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V G E VCE(on) typ. = 2.05V @VGE = 15V, .

  G4PC40S   G4PC40S







Part Number G4PC40UD
Manufacturers International Rectifier
Logo International Rectifier
Description IRG4PC40UD
Datasheet G4PC40S DatasheetG4PC40UD Datasheet (PDF)

PD - 94937 IRG4PC40UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free Benefits • Gene.

  G4PC40S   G4PC40S







Part Number G4PC40U
Manufacturers International Rectifier
Logo International Rectifier
Description IRG4PC40U
Datasheet G4PC40S DatasheetG4PC40U Datasheet (PDF)

www.DataSheet4U.com PD 91466E IRG4PC40U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available •.

  G4PC40S   G4PC40S







Part Number G4PC40K
Manufacturers International Rectifier
Logo International Rectifier
Description IRG4PC40K
Datasheet G4PC40S DatasheetG4PC40K Datasheet (PDF)

PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimize.

  G4PC40S   G4PC40S







IRG4PC40S

PD 91465B IRG4PC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, I C = 31A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 60 31 120 120 ± 20 15 160 65 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.24 ––– 6 (0.21) Max. 0.77 ––– 40 ––– Units °C/W g (oz) www.irf.c.


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