G4PC40UD

PD - 94937 IRG4PC40UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free Benefits Generation -4 IGBT’s offer highest efficiencies available IGBT’s optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT’s. Minimized recovery characteristics require less/no snubbing Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s www.irf.com 1 1/12/04 IRG4PC40UDPbF 2 www.irf.com IRG4PC40UDPbF www.irf.com 3 IRG4PC40UDPbF 4 www.irf.com IRG4PC40UDPbF www.irf.com 5 IRG4PC40UDPbF 6 www.irf.com IRG4PC40UDPbF www.irf.com 7 IRG4PC40UDPbF 8 www.irf.com IRG4PC40UDPbF www.irf.com 9 IRG4PC40UDPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602) -B- 20.30 (.800) 19.70 (.775) 123 14.80 (.583) 14.20 (.559) 3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A- 5.50 (.217) 2X 5.50 (.217) 4.50 (.177) -C- 4.30 (.170) 3.70 (.145) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C...