PD- 91788
IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Optimized for us...
PD- 91788
IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Optimized for use in Welding and Switch-Mode
Power Supply applications
Industry benchmark switching losses improve
efficiency of all power supply topologies 50% reduction of Eoff parameter
G
Low IGBT conduction losses
Latest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Benefits
Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-die
MOSFETs up to 100kHz
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
Absolute Maximum Ratings
C
E
n-channel
VCES = 900V VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
TO-247AC
...
