G4PH40UD2-E

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits • Industry standard TO-247AD package with extended leads G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A Benefits n-channel Applications • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing • Induction cooking systems • Microwave Ovens • Resonant Circuits TO-247AD Parameter Max. 1200 41 21 82 82 10 40 ±20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf in (1.1N m) Absolute Maximum Ratings Units V A VCES IC @ TC = 25°C IC @ TC = 100°C ICM www.DataSheet4U.com ILM IF @ Tc = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current Ù d Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec. Mounting Torque, 6-32 or M3 screw V W °C y y Thermal / Mechanical Ch...