G4PSC71UD

PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 Creepage distance increased to 5.35mm C G E n-channel VCES = 600V VCE(on) typ. = 1.67V @VGE = 15V, IC = 60A Benefits Generation 4 IGBT's offer highest efficiencies available Maximum power density, twice the power handling of TO-247, less space than TO-264 IGBTs optimized for specific application conditions HEXFRED diodes optimized for performance with IGBTs Cost and space saving in designs that require multiple, paralleled IGBTs Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Thermal Resistance\ Mecha...