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G80N60UFD Datasheet

Part Number G80N60UFD
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description SGH80N60UFD
Datasheet G80N60UFD DatasheetG80N60UFD Datasheet (PDF)

SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor.

  G80N60UFD   G80N60UFD






SGH80N60UFD

SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P G C E www.DataSheet.net/ E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes,/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGH80N60UFD 600 ± 20 80 40 220 25 280 195 78 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Ju.


2012-08-13 : C829    G80N60UFD    S1602E    LB070WQ3-TM05    LB084S02-TD01    LB104S02-TD01    LC150V01-SLA1    LC150X02-TL01    LC370WXN-SBD1    LH240Q29-SH01   


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