G8376

PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current l Low terminal capacitance l 3-pin TO-18 package l NIR (near infrared) photometry l Optical communication s Specifications / Absolute maximum ratings Active area (mm) φ0.04 φ0.08 φ0.3 φ0.5 Reverse voltage VR (V) Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C) Type No. Window material Package G8376-01 G8376-02 G8376-03 G8376-05 B orosilicate glass with anti-reflective coating (optimized for 1.55 µ m peak) TO-18 20 -40 to +85 -55 to +125 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral response range Peak sensitivity wavelength λp (µm) 1.55 T er minal Cut-off Shunt frequency capacitance NEP resistance D∗ fc Ct Rsh =λp λ = p λ λ VR=2 V VR=5 V VR=10 mV f=1 MHz RL=50 Ω -3 dB 1.3 µm λ=λp Typ. Max. (c m· Hz 1/2 / W) (W/Hz1/2) (MHz) (pF) (A/W) (A/W) (nA) (nA) (MΩ) 0.06 0.3 3000 0.5 10000 2 × 10-15 0.08 0.4 2000 1 8000 2 × 10-15 0.9 0.95 5 × 1012 400 * 5 1000 0.3 1.5 4 × 10-15 200 * 12 300 0.5 2.5 8 × 10-15 Photo sensitivity S Dark current ID VR=5 V Type No. (µm) G8376-01 G8376-02 G8376-03 G8376-05 * VR=5 V 0.9 to 1.7 1 InGaAs PIN photodiode s Spectral response 1 (Typ. Ta=25 ˚C) G8376 series (Typ. Ta=25 ˚C)...