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G8550

GTM

PNP EPITAXIAL TRANSISTOR

www.DataSheet4U.com CORPORATION G8550 Description Features P N P E P ITAX I A L T R AN S IS T O R ISSUED DATE :2004/12...


GTM

G8550

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Description
www.DataSheet4U.com CORPORATION G8550 Description Features P N P E P ITAX I A L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to G8050 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE Millimeter REF. A S1 b b1 C Min. 4.45 1.02 0.36 0.36 0.36 Max. 4.7 0.51 0.76 0.51 L REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 e1 e b C Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Base Current Junction Temperature Storage Temperature Range Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO -40 VCEO -25 VEBO -6 IC -1.5 IB -0.5 Tj +150 TsTG -55 ~ +150 PD 1 Unit V V V A A W Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -25 -6 45 120 40 100 Typ. 9 ,unless otherwise specified) Max. Unit V V V -100 nA -100 nA -0.5 V -1.2 V -1 V 500 MHz pF Test Conditions IC=-100uA IC=-2mA IE=-100uA VCB=-35V VBE=-6V lC=-800mA, IB=-80mA lC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz 380 s, Duty Cycle 2% * Pulse Test: Pulse Width Classification Of hFE2 Rank Range C 120 ~ 200 D 160 ~ 320 E 250...




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