GA01PNS80-CAL

Silicon Carbide PiN Diode Chip   Die Datasheet GA01PNS80-CAL VRRM IF @ 25 oC = 8000 V = 2A Features  8 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Die Size = 2.4 mm x 2.4 mm   Advantages  Reduced stacking  Reduced system complexity/Increased reliability Applications  Voltage Multiplier  Ignition/Trigger Circuits  Oil/Downhole  Lighting  Defense Maximum Ratings at Tj = 210 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage Continuous forward current RMS forward current Operating and storage temperature VRRM IF IF(RMS) Tj , Tstg Conditions Values 8 2 1 -55 to 210 Electrical Characteristics at Tj = 210 °C, unless otherwise specified Parameter Symbol Conditions Diode forward voltage Reverse current Total reverse recovery charge Switching time Total capacitance Total capacitive charge VF IF = 2 A, Tj = 25 °C IF = 2 A, Tj = 210 °C IR VR = 8 kV, Tj = 25 °C VR = 8 kV, Tj = 210 °C Qrr ts IF ≤ IF,MAX dIF/dt = 70 A/μs Tj = 210 °C VR = 1000 V IF = 1.5 A VR = 1000 V IF = 1.5 A VR = 1 V, f = 1 MHz, Tj = 25 °C C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C QC VR = 1000 V, f = 1 MHz, Tj = 25 °C min. Values typ. 6.1 4.3 4 4 558 < 236 26 5 4 5.4 max. Unit kV A A °C Unit V µA nC ns pF nC     Apr 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 1 ...