GA05JT03-46

GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Package  RoHS Compliant D SG TO-46 VDS = RDS(ON) = ID (Tc = 25°C) = hFE (Tc = 25°C) = 300 V 240 mΩ 9A 110 D G S Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Applications  Down Hole Oil Drilling  Geothermal Instrumentation  Solenoid Actuators  General Purpose High-Temperature Switching  Amplifiers  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PF...