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GA100TS60U Datasheet

Part Number GA100TS60U
Manufacturers International Rectifier
Logo International Rectifier
Description IGBT
Datasheet GA100TS60U DatasheetGA100TS60U Datasheet (PDF)

www.DataSheet.co.kr PD -50055B GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL recognition pending Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.6V @VGE = 15V, IC = 100A Benefits • Increased operating efficiency • D.

  GA100TS60U   GA100TS60U






Part Number GA100TS60SQ
Manufacturers International Rectifier
Logo International Rectifier
Description HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT
Datasheet GA100TS60U DatasheetGA100TS60SQ Datasheet (PDF)

Bulletin I27119 rev. B 06/02 GA100TS60SQ "HALF-BRIDGE" IGBT INT-A-PAK Features • Standard Speed IGBT • • • • • Generation 4 Standard Speed IGBT Technology QuietIR Antiparallel diodes with Fast Soft recovery Very Low Conduction Losses Industry Standard Package Aluminum Nitride DBC UL approved (file E78996) VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25°C Benefits • • • • • Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink H.

  GA100TS60U   GA100TS60U







Part Number GA100TS60SFPBF
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description IGBT
Datasheet GA100TS60U DatasheetGA100TS60SFPBF Datasheet (PDF)

www.DataSheet.co.kr GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt® antiparallel diodes with fast recovery • Very low conduction losses • Al2O3 DBC • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC INT-A-PAK • Designed for industrial level BENEFITS PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C 600 V.

  GA100TS60U   GA100TS60U







Part Number GA100TS60SF
Manufacturers International Rectifier
Logo International Rectifier
Description Standard Speed IGBT
Datasheet GA100TS60U DatasheetGA100TS60SF Datasheet (PDF)

www.DataSheet.co.kr Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25°C Benefits • • • • • Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Hard switching operation frequency up to 1 KHz Ve.

  GA100TS60U   GA100TS60U







IGBT

www.DataSheet.co.kr PD -50055B GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL recognition pending Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.6V @VGE = 15V, IC = 100A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current• Peak Switching Current‚ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 100 200 200 200 ±20 2500 320 170 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module Typ. — — 0.1 — — 200 Max. 0.38 0.70 — 4.0 3.0 — U.


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